QuantumWells相关论文
本工作在GaP/Si衬底上基于In0.83Al0.17As异变缓冲层实现了InAs/In0.83Al0.17As量子阱的生长.研究了GaxIn1-xP和GaAsyP1-y递变缓冲......
Quantum dot infrared photodetector (QDIP) is one of the important emerging devices in the field of infrared (IR) technol......
利用准玻色子方法发展的激子动力学方程是研究半导体纳米结构中激子超快动力学的有效理论手段.为了将这种方法应用于半导体量子阱,......
通过对两种结构参数与设计偏差较大的带间级联激光器（ICL）的研究，探讨了器件性能在结构变化下的耐受性。在300 K时，即使和4.6 μm的设......
成功地控制了自组织三维GaN小岛的外延生长，在其上面可形成多个非极性小面侧壁。以此作为一个理想的基底，在非极性小面上设计制备了I......
Electric field effect on the second-order nonlinear optical properties in semiparabolic quantum wells are studied th......
Improvement Of Crystal Quality Of M-Plane InGaNGaN Quantum Wells Grown On Tilt-Cut LiAlO By PAMBE Fo
In this work,a series of samples were grown at different growth temperatures,we analyzed the characteristics of M-pl......
